{
"name": "Electronics",
"description": "電子學",
"path": "Module:CGroup/Electronics",
"rules": [
{
"original": "Acceptor",
"conv": "zh-tw:受體; zh-cn:受主"
},
{
"original": "Active",
"conv": "zh-cn:有源; zh-tw:主動;"
},
{
"original": "Active region",
"conv": "zh-cn:放大区; zh-tw:主動區;"
},
{
"original": "ADC",
"conv": "zh-cn:模拟数字转换器; zh-hk:模擬數碼轉換器; zh-tw:類比數位轉換器"
},
{
"original": "Aligner",
"conv": "zh-cn:光刻机; zh-tw:曝光機; zh-hk:光刻機;"
},
{
"original": "Analog",
"conv": "zh-tw:類比; zh-cn:模拟; zh-hk:模擬;"
},
{
"original": "AND gate",
"conv": "zh-cn:与门; zh-hk:與門; zh-tw:及閘;"
},
{
"original": "ASIC",
"conv": "zh-cn:特殊应用集成电路; zh-hk:特殊應用集成電路; zh-tw:特定應用積體電路; zh-hant:特殊應用積體電路;"
},
{
"original": "ASIC",
"conv": "专用集成电路=>zh-hk:特殊應用集成電路; 专用集成电路=>zh-tw:特定應用積體電路"
},
{
"original": "Avalanche breakdown",
"conv": "zh-tw:突崩潰; zh-cn:雪崩击穿;"
},
{
"original": "Avalanche diode",
"conv": "zh-tw:雪崩二極體; zh-cn:雪崩二极管;"
},
{
"original": "Avalanche photodiode",
"conv": "zh-tw:雪崩光二極體; zh-cn:雪崩光电二极管;"
},
{
"original": "BEOL",
"conv": "zh-cn:后道工序;zh-tw:後段製程;"
},
{
"original": "Biasing",
"conv": "zh-cn:偏置; zh-tw:偏壓;"
},
{
"original": "Bit",
"conv": "zh-tw:位元; zh-cn:比特;"
},
{
"original": "Boolean",
"conv": "zh-tw:布林; zh-cn:布尔; zh-hk:布林;"
},
{
"original": "Breakdown voltage",
"conv": "zh-tw:崩潰電壓; zh-cn:击穿电压; zh-hk:擊穿電壓;"
},
{
"original": "Carrier",
"conv": "zh-cn:载流子; zh-tw:載子;"
},
{
"original": "cache",
"conv": "zh-cn:缓存; zh-tw:快取; zh-hk:緩衝記憶體;"
},
{
"original": "cache",
"conv": "高速缓存=>zh-tw:快取; 高速缓存=>zh-hk:緩衝記憶體; 高速缓存=>zh-mo:緩衝記憶體;"
},
{
"original": "cache",
"conv": "緩存=>zh-tw:快取; 緩存=>zh-hk:緩衝記憶體; 緩存=>zh-mo:快取;"
},
{
"original": "cache",
"conv": "高速緩存=>zh-tw:快取; 高速緩存=>zh-hk:緩衝記憶體; 高速緩存=>zh-mo:緩衝記憶體;"
},
{
"original": "Channel",
"conv": "zh-cn:沟道; zh-tw:通道;"
},
{
"original": "Clock gating",
"conv": "zh-cn:时钟门控; zh-tw:時脈閘控;"
},
{
"original": "Clock signal",
"conv": "zh-cn:时间脉冲信号; zh-tw:時鐘訊號;"
},
{
"original": "Collector",
"conv": "zh-cn:集电极; zh-tw:集極;"
},
{
"original": "Collector junction",
"conv": "集極接面=>zh-tw:集極接面;集極接面=>zh-cn:集电结;"
},
{
"original": "Collector junction",
"conv": "集电极结=>zh-cn:集电极结;集电极结=>zh-tw:集極接面;"
},
{
"original": "Common-mode rejection ratio",
"conv": "zh-cn:共模抑制比; zh-tw:共模拒斥比;"
},
{
"original": "Compact fluorescent lamp",
"conv": "zh-cn:节能灯; zh-tw:省電燈泡; zh-hk:慳電膽;"
},
{
"original": "Component",
"conv": "元器件=>zh-tw:元件;"
},
{
"original": "Coordinate",
"conv": "zh-cn:坐标; zh-tw:座標;"
},
{
"original": "DAC",
"conv": "zh-cn:数字模拟转换器; zh-hk:數碼模擬轉換器; zh-tw:數位類比轉換器"
},
{
"original": "Depletion",
"conv": "zh-tw:空乏; zh-cn:耗尽; zh-hk:空乏;"
},
{
"original": "Depletion layer",
"conv": "zh-cn:耗尽层; zh-tw:空乏層"
},
{
"original": "Depletion region",
"conv": "zh-cn:耗尽区; zh-tw:空乏區"
},
{
"original": "Device",
"conv": "zh-cn:器件; zh-tw:元件"
},
{
"original": "Digital",
"conv": "zh-tw:數位; zh-cn:数字; zh-hk:數碼;"
},
{
"original": "Diode",
"conv": "zh-tw:二極體; zh-cn:二极管"
},
{
"original": "Discrete component",
"conv": "zh-cn:分立器件; zh-tw:離散元件;"
},
{
"original": "Disk",
"conv": "zh-cn:磁盘; zh-tw:磁碟;"
},
{
"original": "Donor",
"conv": "zh-tw:施體; zh-cn:施主"
},
{
"original": "Drain",
"conv": "zh-tw:汲極; zh-cn:漏极"
},
{
"original": "DSP",
"conv": "zh-tw:數位訊號處理器; zh-hk:數碼訊號處理器; zh-cn:数字信号处理器;"
},
{
"original": "Early effect",
"conv": "zh-tw:爾利效應; zh-cn:厄利效应;"
},
{
"original": "Electrical ballast",
"conv": "zh-tw:安定器; zh-cn:镇流器; zh-hk:鎮流器;"
},
{
"original": "Electrical engineering",
"conv": "zh-tw:電機工程; zh-cn:电气工程;"
},
{
"original": "Electron hole",
"conv": "zh-cn:空穴; zh-tw:電洞;"
},
{
"original": "Electron mobility",
"conv": "zh-cn:电子迁移率; zh-tw:電子移動率;"
},
{
"original": "Emitter",
"conv": "zh-cn:发射极; zh-tw:射極;"
},
{
"original": "Emitter follower",
"conv": "zh-tw:射極隨耦器; zh-cn:射极跟随器;"
},
{
"original": "Emitter junction",
"conv": "射極接面=>zh-tw:射極接面;射極接面=>zh-cn:发射结;"
},
{
"original": "Emitter junction",
"conv": "发射极结=>zh-cn:发射极结;发射极结=>zh-tw:射極接面;"
},
{
"original": "Epitaxy",
"conv": "zh-tw:磊晶; zh-cn:外延;"
},
{
"original": "Etching",
"conv": "zh-cn:刻蚀; zh-tw:蝕刻;"
},
{
"original": "Excitation table",
"conv": "zh-cn:激励表; zh-tw:激發表;"
},
{
"original": "Fairchild Semiconductor",
"conv": "zh-cn:飞兆半导体公司; zh-tw:快捷半導體公司; zh-hk:快捷半導體公司;"
},
{
"original": "Feedback",
"conv": "zh-cn:反馈; zh-hk:反饋; zh-tw:回饋;"
},
{
"original": "FEOL",
"conv": "zh-cn:前道工序;zh-tw:前段製程;"
},
{
"original": "Field Effect Transistor",
"conv": "zh-cn:场效应管; zh-tw:場效電晶體;"
},
{
"original": "Field Effect Transistor",
"conv": "场效应晶体管=>zh-tw:場效電晶體;"
},
{
"original": "Firmware",
"conv": "zh-cn:固件; zh-tw:韌體;"
},
{
"original": "Flip-flop",
"conv": "zh-cn:触发器; zh-tw:正反器;"
},
{
"original": "Fluorescent",
"conv": "zh-cn:荧光; zh-tw:螢光; zh-hk:熒光;"
},
{
"original": "Fourteen-segment display",
"conv": "zh-cn:十四段数码管; zh-hk:十四劃管; zh-tw:十四段顯示器;"
},
{
"original": "Forward",
"conv": "zh-cn:正向; zh-tw:順向;"
},
{
"original": "Gate",
"conv": "zh-tw:閘極; zh-cn:栅极"
},
{
"original": "Gate circuit",
"conv": "zh-tw:閘電路; zh-cn:门电路; zh-hk:門電路;"
},
{
"original": "generator",
"conv": "zh-tw:產生器; zh-cn:发生器; zh-hk:發生器;"
},
{
"original": "GlobalFoundries",
"conv": "zh-tw:格羅方德; zh-cn:格芯;"
},
{
"original": "Hard baking??",
"conv": "zh-cn:硬烘干; zh-tw:硬烤;"
},
{
"original": "Heterojunction",
"conv": "zh-cn:异质结; zh-tw:異質接面;"
},
{
"original": "High-intensity discharge",
"conv": "zh-cn:金卤灯; zh-tw:高強度氣體放電燈;"
},
{
"original": "IGBT",
"conv": "zh-tw:絕緣閘雙極電晶體; zh-cn:绝缘栅双极晶体管;"
},
{
"original": "incandescent lamp",
"conv": "zh-cn:白炽灯; zh-tw:白熾燈; zh-hk:鎢絲膽; 熱熾燈=>zh-cn:白炽灯; 熱熾燈=>zh-hk:鎢絲膽; 钨丝灯=>zh-hk:鎢絲膽; 鎢絲燈=>zh-hk:鎢絲膽;"
},
{
"original": "Integrated circuit",
"conv": "zh-tw:積體電路; zh-cn:集成电路; zh-hk:集成電路;"
},
{
"original": "Interface",
"conv": "zh-tw:介面; zh-cn:接口;"
},
{
"original": "Ion implantation",
"conv": "zh-tw:離子佈植; zh-cn:离子注入;"
},
{
"original": "IP core",
"conv": "zh-tw:矽智財; zh-cn:IP核;"
},
{
"original": "JFET",
"conv": "zh-tw:接面場效電晶體; zh-cn:结型场效应管;"
},
{
"original": "Junction capacitance",
"conv": "zh-cn:结电容; zh-tw:接面電容;"
},
{
"original": "Junctional",
"conv": "zh-cn:结型; zh-tw:接面型;"
},
{
"original": "Laser",
"conv": "zh-cn:激光; zh-hk:激光; zh-tw:雷射;"
},
{
"original": "Latch",
"conv": "zh-cn:锁存器; zh-hk:鎖存器; zh-tw:閂鎖;"
},
{
"original": "logic device",
"conv": "zh-cn:逻辑器件; zh-tw:邏輯裝置;"
},
{
"original": "Logic gate",
"conv": "zh-tw:邏輯閘; zh-cn:逻辑门; zh-hk:邏輯門;"
},
{
"original": "logic synthesis",
"conv": "zh-tw:邏輯合成; zh-cn:逻辑综合;"
},
{
"original": "LSI",
"conv": "zh-cn:大规模集成电路; zh-tw:大型積體電路;"
},
{
"original": "Mask",
"conv": "zh-cn:掩模; zh-tw:光罩;"
},
{
"original": "Mask",
"conv": "掩膜=>zh-tw:光罩; 光掩模=>zh-tw:光罩;"
},
{
"original": "Microcontroller",
"conv": "单片机=>zh-tw:微控制器;"
},
{
"original": "Mixed-singal",
"conv": "zh-tw:混訊; zh-cn:混合信号;"
},
{
"original": "Mixed-singal integrated circuits",
"conv": "zh-tw:混合訊號積體電路; zh-cn:混合信号集成电路;"
},
{
"original": "Modulation",
"conv": "zh-tw:調變; zh-cn:调制;"
},
{
"original": "MOSFET",
"conv": "zh-cn:金属氧化物半导体场效应管; zh-tw:金屬氧化物半導體場效電晶體;"
},
{
"original": "Multivibrator",
"conv": "zh-cn:多谐振荡器; zh-tw:複振器;"
},
{
"original": "Multiplexer",
"conv": "zh-cn:数据选择器; zh-tw:數據多工器;"
},
{
"original": "NAND gate",
"conv": "zh-cn:与非门; zh-hk:與非門; zh-tw:反及閘;"
},
{
"original": "NAND logic",
"conv": "zh-cn:与非逻辑; zh-hk:與非邏輯; zh-tw:反及邏輯;"
},
{
"original": "Nanometer",
"conv": "zh-hans:纳米; zh-hant:納米;zh-tw:奈米;"
},
{
"original": "NOR gate",
"conv": "zh-cn:或非门; zh-hk:或非門; zh-tw:反或閘;"
},
{
"original": "NOR logic",
"conv": "zh-cn:或非逻辑; zh-hk:或非邏輯; zh-tw:反或邏輯;"
},
{
"original": "NOT gate gate",
"conv": "zh-cn:非门; zh-hk:非門; zh-tw:反閘;"
},
{
"original": "Noise",
"conv": "zh-tw:雜訊; zh-cn:噪声;"
},
{
"original": "Nine-segment display",
"conv": "zh-cn:九段数码管; zh-hk:九劃管; zh-tw:九段顯示器;"
},
{
"original": "Nixie tube",
"conv": "zh-hans:数码管; zh-cn:数字管; zh-tw:數位管; zh-hk:數碼管;"
},
{
"original": "OR gate",
"conv": "zh-cn:或门; zh-hk:或門; zh-tw:或閘;"
},
{
"original": "Passive filter",
"conv": "zh-tw:被動式濾波器; zh-cn:无源滤波器;"
},
{
"original": "Photodiode",
"conv": "zh-tw:光電二極體; zh-cn:光电二极管;"
},
{
"original": "Photolithography",
"conv": "zh-cn:光刻; zh-tw:微影;"
},
{
"original": "Photoresist",
"conv": "zh-cn:光刻胶; zh-tw:光阻劑;"
},
{
"original": "Photovoltaics",
"conv": "zh-tw:太陽能光電; zh-cn:太阳能光伏;"
},
{
"original": "Photovoltaics",
"conv": "zh-tw:太陽能光電; zh-cn:光伏;"
},
{
"original": "Photomask",
"conv": "zh-cn:光掩模; zh-tw:光罩;"
},
{
"original": "Pinch off",
"conv": "zh-cn:夹断; zh-tw:夹止;"
},
{
"original": "PN junction",
"conv": "zh-cn:PN结; zh-tw:PN接面;"
},
{
"original": "PN junction",
"conv": "zh-cn:P-N结; zh-tw:P-N接面;"
},
{
"original": "Power factor",
"conv": "zh-cn:功率因数; zh-hk:功率因數; zh-tw:功率因素;"
},
{
"original": "Power inverter",
"conv": "zh-cn:逆变器; zh-tw:變流器;"
},
{
"original": "Power inverter",
"conv": "zh-cn:逆變器; zh-tw:變流器;"
},
{
"original": "Power inverter",
"conv": "zh-cn:脉冲逆变器; zh-tw:變流器;"
},
{
"original": "Power line frequency",
"conv": "zh-cn:工频; zh-tw:電源頻率;"
},
{
"original": "Program",
"conv": "zh-cn:程序; zh-tw:程式;"
},
{
"original": "programmable",
"conv": "zh-cn:可编程; zh-tw:可程式化;"
},
{
"original": "Programmable Array Logic",
"conv": "zh-cn:可编程阵列逻辑; zh-tw:可程式化陣列邏輯;"
},
{
"original": "Programmable Gate Array",
"conv": "zh-cn:可编程逻辑门阵列; zh-tw:可程式化邏輯閘陣列;"
},
{
"original": "Programmable Logic Array",
"conv": "zh-cn:可编程逻辑阵列; zh-tw:可程式化邏輯陣列;"
},
{
"original": "Process",
"conv": "工艺=>zh-tw:製程;"
},
{
"original": "Protective relay",
"conv": "zh-cn:保护继电器; zh-tw:保護電驛;"
},
{
"original": "Race harzard",
"conv": "zh-cn:竞争冒险; zh-tw:競爭危害;"
},
{
"original": "RAM",
"conv": "zh-cn:只读存储器; zh-tw:唯讀記憶體;"
},
{
"original": "Reverse",
"conv": "zh-cn:反向; zh-tw:逆向;"
},
{
"original": "Reconfigurable computing",
"conv": "zh-cn:可重构计算; zh-tw:可重組計算;"
},
{
"original": "Ripple",
"conv": "zh-cn:纹波; zh-tw:漣波;"
},
{
"original": "Sampling",
"conv": "zh-cn:采样; zh-tw:抽樣; zh-tw:取樣;"
},
{
"original": "Scalar",
"conv": "zh-cn:标量; zh-tw:純量;"
},
{
"original": "Schmitt trigger",
"conv": "zh-cn:施密特触发器; zh-tw:施密特觸發器;"
},
{
"original": "Schottky",
"conv": "zh-tw:蕭特基; zh-cn:肖特基;"
},
{
"original": "Sensor",
"conv": "zh-hans:传感器; zh-hant:感測器;"
},
{
"original": "Sequential logic",
"conv": "zh-hans:时序逻辑; zh-hant:序向邏輯;"
},
{
"original": "Seven-segment display",
"conv": "zh-cn:七段数码管; zh-hk:七劃管; zh-tw:七段顯示器;"
},
{
"original": "shield",
"conv": "zh-cn:屏蔽; zh-tw:遮蔽;"
},
{
"original": "Silicon controlled rectifier",
"conv": "zh-cn:可控硅; zh-tw:矽控整流器;"
},
{
"original": "signal",
"conv": "zh-cn:信号; zh-tw:訊號; zh-hk:訊號; 信號=>zh-mo:訊號;"
},
{
"original": "Silicon",
"conv": "zh-tw:矽; zh-cn:硅;"
},
{
"original": "Sine signal",
"conv": "zh-cn:正弦信号; zh-tw:正弦訊號;"
},
{
"original": "Sixteen-segment display",
"conv": "zh-cn:十六段数码管; zh-hk:十六劃管; zh-tw:十六段顯示器;"
},
{
"original": "Soft baking??",
"conv": "zh-cn:软烘干; zh-tw:軟烤;"
},
{
"original": "Starting",
"conv": "zh-cn:启辉器; zh-hk:士撻膽; zh-tw:啟動器;"
},
{
"original": "Substrate",
"conv": "zh-cn:衬底; zh-tw:基板;"
},
{
"original": "Subthreshold",
"conv": "zh-cn:亚阈值; zh-tw:次臨界"
},
{
"original": "Superposition theorem",
"conv": "zh-cn:叠加定理; zh-tw:重疊定理;"
},
{
"original": "System on a chip, SoC",
"conv": "zh-cn:单片系统; zh-tw:單晶片系統;"
},
{
"original": "System in package, SiP",
"conv": "zh-cn:封装内系统; zh-tw:封裝體系;"
},
{
"original": "Tape-out",
"conv": "zh-cn:流片; zh-tw:下線;"
},
{
"original": "TSM(C)",
"conv": "zh-hans:台湾积体电路制造; zh-hant:台灣積體電路製造;"
},
{
"original": "Transmission gate",
"conv": "zh-cn:传输门; zh-hk:傳輸門; zh-tw:傳輸閘;"
},
{
"original": "Transistor",
"conv": "zh-cn:晶体管; zh-tw:電晶體;"
},
{
"original": "Thrystor",
"conv": "zh-cn:晶闸管; zh-tw:閘流體;"
},
{
"original": "Utility frequency",
"conv": "zh-cn:工频; zh-tw:電源頻率;"
},
{
"original": "VLSI",
"conv": "zh-cn:超大规模集成电路; zh-tw:超大型積體電路;"
},
{
"original": "Universal motor",
"conv": "zh-cn:单相串励电动机; zh-tw:交流整流子電動機;"
},
{
"original": "Wire bonding",
"conv": "zh-tw:打線接合; zh-cn:引线键合"
},
{
"original": "XNOR gate",
"conv": "zh-cn:同或门; zh-hk:同或門; zh-tw:反互斥或閘;"
},
{
"original": "XNOR logic",
"conv": "zh-cn:同或逻辑; zh-hk:同或邏輯; zh-tw:反互斥或邏輯;"
},
{
"original": "XOR",
"conv": "zh-cn:异或; zh-hk:異或; zh-tw:互斥或;"
},
{
"original": "XOR gate",
"conv": "zh-cn:异或门; zh-hk:異或門; zh-tw:互斥或閘;"
},
{
"original": "XOR logic",
"conv": "zh-cn:异或逻辑; zh-hk:異或邏輯; zh-tw:互斥或邏輯;"
},
{
"original": "Zener diode",
"conv": "zh-cn:齐纳二极管; zh-hk:齊納二極體; zh-tw:稽納二極體;"
}
]
}