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PnJunction

oxiphysics_materials::semiconductor

Struct PnJunction 

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pub struct PnJunction {
    pub band: BandStructure,
    pub nd: f64,
    pub na: f64,
    pub temperature_k: f64,
    pub area: f64,
}
Expand description

P-N junction model.

Models the electrostatics and I-V characteristics of an abrupt p-n junction.

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§band: BandStructure

Band structure.

§nd: f64

Donor concentration (n-side) in cm^-3.

§na: f64

Acceptor concentration (p-side) in cm^-3.

§temperature_k: f64

Temperature in K.

§area: f64

Junction area in cm^2.

Implementations§

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impl PnJunction

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pub fn new( band: BandStructure, nd: f64, na: f64, temperature_k: f64, area: f64, ) -> Self

Create a new p-n junction.

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pub fn ni(&self) -> f64

Intrinsic carrier concentration.

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pub fn built_in_potential(&self) -> f64

Built-in potential Vbi in V.

Vbi = (k_B T / q) * ln(Na * Nd / ni^2)

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pub fn depletion_width(&self, applied_voltage: f64) -> f64

Depletion width W in cm.

W = sqrt(2 * epsilon * (Vbi - V) * (1/Na + 1/Nd) / q)

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pub fn xn(&self, applied_voltage: f64) -> f64

Depletion width on the n-side in cm.

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pub fn xp(&self, applied_voltage: f64) -> f64

Depletion width on the p-side in cm.

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pub fn junction_capacitance(&self, applied_voltage: f64) -> f64

Junction capacitance per unit area in F/cm^2.

C_j = epsilon / W

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pub fn total_capacitance(&self, applied_voltage: f64) -> f64

Total junction capacitance in F.

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pub fn max_electric_field(&self, applied_voltage: f64) -> f64

Maximum electric field in V/cm.

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pub fn saturation_current(&self, dn: f64, dp: f64, ln: f64, lp: f64) -> f64

Reverse saturation current I0 in A.

Uses the Shockley diode equation parameters.

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pub fn shockley_current( &self, voltage: f64, i0: f64, ideality_factor: f64, ) -> f64

Current through the junction using Shockley diode equation.

I = I0 * (exp(V / (n * V_T)) - 1)

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pub fn breakdown_voltage(&self) -> f64

Breakdown voltage estimate (empirical, for silicon).

V_br ≈ 60 * (Eg / 1.1)^{3/2} * (Nb / 10^16)^{-3/4}

Trait Implementations§

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impl Clone for PnJunction

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fn clone(&self) -> PnJunction

Returns a duplicate of the value. Read more
1.0.0 (const: unstable) · Source§

fn clone_from(&mut self, source: &Self)

Performs copy-assignment from source. Read more
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impl Debug for PnJunction

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fn fmt(&self, f: &mut Formatter<'_>) -> Result

Formats the value using the given formatter. Read more
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impl Copy for PnJunction

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impl<T> Any for T
where T: 'static + ?Sized,

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fn type_id(&self) -> TypeId

Gets the TypeId of self. Read more
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impl<T> Borrow<T> for T
where T: ?Sized,

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fn borrow(&self) -> &T

Immutably borrows from an owned value. Read more
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impl<T> BorrowMut<T> for T
where T: ?Sized,

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fn borrow_mut(&mut self) -> &mut T

Mutably borrows from an owned value. Read more
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impl<T> CloneToUninit for T
where T: Clone,

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unsafe fn clone_to_uninit(&self, dest: *mut u8)

🔬This is a nightly-only experimental API. (clone_to_uninit)
Performs copy-assignment from self to dest. Read more
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impl<T> From<T> for T

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fn from(t: T) -> T

Returns the argument unchanged.

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impl<T, U> Into<U> for T
where U: From<T>,

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fn into(self) -> U

Calls U::from(self).

That is, this conversion is whatever the implementation of From<T> for U chooses to do.

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impl<T> ToOwned for T
where T: Clone,

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type Owned = T

The resulting type after obtaining ownership.
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fn to_owned(&self) -> T

Creates owned data from borrowed data, usually by cloning. Read more
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fn clone_into(&self, target: &mut T)

Uses borrowed data to replace owned data, usually by cloning. Read more
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impl<T, U> TryFrom<U> for T
where U: Into<T>,

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type Error = Infallible

The type returned in the event of a conversion error.
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fn try_from(value: U) -> Result<T, <T as TryFrom<U>>::Error>

Performs the conversion.
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impl<T, U> TryInto<U> for T
where U: TryFrom<T>,

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type Error = <U as TryFrom<T>>::Error

The type returned in the event of a conversion error.
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fn try_into(self) -> Result<U, <U as TryFrom<T>>::Error>

Performs the conversion.