Module semiconductor 

Semiconductor physics: band gap, carrier transport, junctions, and device models.

This module provides comprehensive semiconductor physics modeling including band structure, carrier concentrations, drift-diffusion transport, p-n junctions, Schottky barriers, recombination mechanisms, MOSFET models, and analysis tools.

Structs

BandStructure

Band structure parameters of a semiconductor.

CarrierConcentration

Carrier concentration calculations for a semiconductor.

DriftDiffusion

Drift-diffusion transport model for semiconductors.

MosfetModel

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) model.

PnJunction

P-N junction model.

RecombinationModel

Recombination mechanisms in semiconductors.

SchottkyBarrier

Schottky barrier (metal-semiconductor) junction model.

SemiconductorAnalysis

Analysis tools for semiconductor properties.

Enums

DopingType

Doping type of a semiconductor.

Constants

EPSILON_0

Permittivity of free space in F/m.

HBAR

Reduced Planck constant in J·s.

H_PLANCK

Planck constant in J·s.

K_BOLTZMANN_EV

Boltzmann constant in eV/K.

K_BOLTZMANN_J

Boltzmann constant in J/K.

M_ELECTRON

Free electron mass in kg.

Q_ELECTRON

Elementary charge in C.

Functions

thermal_voltage

Thermal voltage at temperature T: V_T = k_B * T / q.