Struct CarrierConcentration 

pub struct CarrierConcentration {
    pub band: BandStructure,
    pub temperature_k: f64,
    pub nd: f64,
    pub na: f64,
}

Carrier concentration calculations for a semiconductor.

Computes intrinsic carrier concentration, doped carrier densities, and Fermi level positions.

Fields

band: BandStructure

Band structure of the material.

temperature_k: f64

Temperature in Kelvin.

nd: f64

Donor concentration in cm^-3.

na: f64

Acceptor concentration in cm^-3.

Implementations

impl CarrierConcentration

pub fn new(band: BandStructure, temperature_k: f64, nd: f64, na: f64) -> Self

Create a new carrier concentration model.

pub fn intrinsic_concentration(&self) -> f64

Intrinsic carrier concentration ni in cm^-3.

ni = sqrt(Nc * Nv) * exp(-Eg / (2 * k_B * T))

pub fn fermi_dirac_half(eta: f64) -> f64

Fermi-Dirac integral of order 1/2 (approximation).

F_{1/2}(eta) approximated using the Joyce-Dixon formula.

pub fn electron_concentration(&self) -> f64

Electron concentration n0 in cm^-3 (assuming complete ionization).

pub fn hole_concentration(&self) -> f64

Hole concentration p0 in cm^-3.

pub fn doping_type(&self) -> DopingType

Doping type of the material.

pub fn fermi_level_shift(&self) -> f64

Fermi level position relative to intrinsic Fermi level in eV.

Ef - Ei = k_B * T * ln(n0 / ni)

pub fn compensation_ratio(&self) -> f64

Compensation ratio: min(Nd, Na) / max(Nd, Na).

pub fn debye_length(&self) -> f64

Debye length in cm.

Trait Implementations

impl Clone for CarrierConcentration

fn clone(&self) -> CarrierConcentration

Returns a duplicate of the value.

fn clone_from(&mut self, source: &Self)

Performs copy-assignment from source.

impl Debug for CarrierConcentration

fn fmt(&self, f: &mut Formatter<'_>) -> Result

Formats the value using the given formatter.

impl Copy for CarrierConcentration