Struct MosfetModel 

pub struct MosfetModel {
    pub vth: f64,
    pub cox: f64,
    pub mobility: f64,
    pub width: f64,
    pub length: f64,
    pub temperature_k: f64,
    pub n_sub: f64,
    pub lambda: f64,
}

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) model.

Implements the square-law MOSFET model with subthreshold behavior.

Fields

vth: f64

Threshold voltage Vth in V.

cox: f64

Oxide capacitance per unit area Cox in F/cm^2.

mobility: f64

Channel mobility in cm^2/(V·s).

width: f64

Channel width in cm.

length: f64

Channel length in cm.

temperature_k: f64

Temperature in K.

n_sub: f64

Subthreshold swing ideality factor (typically 1.0-1.5).

lambda: f64

Channel-length modulation parameter lambda in V^-1.

Implementations

impl MosfetModel

pub fn new( vth: f64, cox: f64, mobility: f64, width: f64, length: f64, temperature_k: f64, n_sub: f64, lambda: f64, ) -> Self

Create a new MOSFET model.

pub fn typical_nmos() -> Self

Typical NMOS transistor parameters.

pub fn transconductance_parameter(&self) -> f64

Transconductance parameter K = mu * Cox * W / L in A/V^2.

pub fn linear_current(&self, vgs: f64, vds: f64) -> f64

Drain current in the linear (triode) region in A.

Id = K * ((Vgs - Vth) * Vds - Vds^2 / 2) * (1 + lambda * Vds)

pub fn saturation_current(&self, vgs: f64, vds: f64) -> f64

Drain current in the saturation region in A.

Id = (K / 2) * (Vgs - Vth)^2 * (1 + lambda * Vds)

pub fn drain_current(&self, vgs: f64, vds: f64) -> f64

Drain current combining linear and saturation regions.

pub fn subthreshold_current(&self, vgs: f64, vds: f64) -> f64

Subthreshold current in A.

I_sub = I0 * exp((Vgs - Vth) / (n * V_T)) * (1 - exp(-Vds / V_T))

pub fn subthreshold_swing(&self) -> f64

Subthreshold swing in mV/decade.

pub fn transconductance(&self, vgs: f64) -> f64

Transconductance gm = dId/dVgs in the saturation region, in A/V.

pub fn output_conductance(&self, vgs: f64) -> f64

Output conductance gds = dId/dVds in saturation, in A/V.

pub fn intrinsic_gain(&self, vgs: f64) -> f64

Intrinsic voltage gain Av = gm / gds.

pub fn body_effect_vth(vth0: f64, gamma: f64, phi_f: f64, vsb: f64) -> f64

Threshold voltage with body effect.

Vth = Vth0 + gamma * (sqrt(2phi_f + Vsb) - sqrt(2phi_f))

Trait Implementations

impl Clone for MosfetModel

fn clone(&self) -> MosfetModel

Returns a duplicate of the value.

fn clone_from(&mut self, source: &Self)

Performs copy-assignment from source.

impl Debug for MosfetModel

fn fmt(&self, f: &mut Formatter<'_>) -> Result

Formats the value using the given formatter.

impl Copy for MosfetModel