Struct SemiconductorAnalysis 

pub struct SemiconductorAnalysis;

Analysis tools for semiconductor properties.

Provides calculations for resistivity, sheet resistance, and Hall measurements.

Implementations

impl SemiconductorAnalysis

pub fn resistivity(n: f64, mu_n: f64, p: f64, mu_p: f64) -> f64

Resistivity in Ohm·cm.

rho = 1 / (q * (n * mu_n + p * mu_p))

pub fn conductivity(n: f64, mu_n: f64, p: f64, mu_p: f64) -> f64

Conductivity in (Ohm·cm)^-1.

pub fn sheet_resistance(resistivity: f64, thickness: f64) -> f64

Sheet resistance in Ohm/square.

pub fn hall_coefficient_n(n: f64) -> f64

Hall coefficient R_H in cm^3/C.

For a single carrier type (n-type): R_H = -1 / (q * n) For a single carrier type (p-type): R_H = 1 / (q * p)

pub fn hall_coefficient_p(p: f64) -> f64

Hall coefficient for p-type.

pub fn hall_coefficient_mixed(n: f64, mu_n: f64, p: f64, mu_p: f64) -> f64

Hall coefficient for a mixed carrier system.

R_H = (p * mu_p^2 - n * mu_n^2) / (q * (p * mu_p + n * mu_n)^2)

pub fn hall_mobility(hall_coefficient: f64, conductivity: f64) -> f64

Hall mobility mu_H = R_H * sigma in cm^2/(V·s).

pub fn carrier_from_hall(hall_coefficient: f64) -> f64

Carrier concentration from Hall measurement in cm^-3.

pub fn four_point_probe( voltage: f64, current: f64, thickness: f64, correction_factor: f64, ) -> f64

Four-point probe resistivity measurement.

For a thin sheet: rho = (pi / ln(2)) * t * V / I * correction_factor

pub fn mobility_from_conductivity(conductivity: f64, carrier_conc: f64) -> f64

Mobility from conductivity and carrier concentration.

pub fn tlm_contact_resistance( r_total: f64, r_sheet: f64, gap_distance: f64, width: f64, ) -> f64

Contact resistance for ohmic contacts using TLM model.

R_total = 2 * R_c + R_sheet * d / W

pub fn specific_contact_resistivity( r_contact: f64, contact_length: f64, width: f64, ) -> f64

Specific contact resistivity from contact resistance.