Struct Mos1Model 

pub struct Mos1Model {

    pub nmos: bool,
    pub vto: Option<f64>,
    pub kp: Option<f64>,
    pub gamma: Option<f64>,
    pub phi: Option<f64>,
    pub lambda: f64,
    pub rd: Option<f64>,
    pub rs: Option<f64>,
    pub cbd: Option<f64>,
    pub cbs: Option<f64>,
    pub is: f64,
    pub pb: f64,
    pub cgso: f64,
    pub cgdo: f64,
    pub cgbo: f64,
    pub rsh: Option<f64>,
    pub cj: Option<f64>,
    pub mj: f64,
    pub cjsw: Option<f64>,
    pub mjsw: f64,
    pub js: f64,
    pub tox: Option<f64>,
    pub ld: f64,
    pub u0: Option<f64>,
    pub fc: f64,
    pub nsub: Option<f64>,
    pub tpg: Option<f64>,
    pub nss: Option<f64>,
    pub kf: f64,
    pub af: f64,
    pub nlev: i64,
    pub gdsnoi: f64,
    pub tnom: Option<f64>,
}

.model … nmos(level=1 …)/pmos(level=1 …) parameters, 3f5 names and defaults (mos1.c keyword table; defaults from mos1set.c). Option marks parameters whose given-ness changes the preprocessing in MOS1temp (e.g. KP computed from U0/TOX, VTO/PHI/GAMMA from NSUB, CBD vs CJ·AD).

Fields

nmos: bool

NMOS (+1) or PMOS (−1).

vto: Option<f64>

VTO/VT0: threshold voltage; default 0, or computed from NSUB/NSS/TPG when those are given.

kp: Option<f64>

KP: transconductance; default 2e-5, or U0·COX with TOX.

gamma: Option<f64>

GAMMA: bulk threshold; default 0, or computed from NSUB.

phi: Option<f64>

PHI: surface potential; default 0.6, or from NSUB.

lambda: f64

LAMBDA: channel-length modulation, default 0.

rd: Option<f64>

RD: drain ohmic resistance, default 0.

rs: Option<f64>

RS: source ohmic resistance, default 0.

cbd: Option<f64>

CBD: zero-bias B-D junction capacitance, default 0.

cbs: Option<f64>

CBS: zero-bias B-S junction capacitance, default 0.

is: f64

IS: bulk junction saturation current, default 1e-14.

pb: f64

PB: bulk junction potential, default 0.8.

cgso: f64

CGSO/CGDO/CGBO: overlap capacitances per meter, default 0.

cgdo: f64

cgbo: f64

rsh: Option<f64>

RSH: drain/source diffusion sheet resistance, default 0.

cj: Option<f64>

CJ: bottom junction capacitance per m², default 0.

mj: f64

MJ: bottom grading coefficient, default 0.5.

cjsw: Option<f64>

CJSW: sidewall capacitance per meter, default 0.

mjsw: f64

MJSW: sidewall grading coefficient, default 0.5.

js: f64

JS: bulk junction saturation current per m², default 0.

tox: Option<f64>

TOX: oxide thickness, meters.

ld: f64

LD: lateral diffusion, default 0.

u0: Option<f64>

U0/UO: surface mobility, cm²/V·s; default 600.

fc: f64

FC: forward-bias depletion capacitance coefficient, default 0.5.

nsub: Option<f64>

NSUB: substrate doping, 1/cm³.

tpg: Option<f64>

TPG: gate material type (+1 opposite of substrate, −1 same, 0 aluminum); default 1 when NSUB is given.

nss: Option<f64>

NSS: surface state density, 1/cm².

kf: f64

KF/AF (noise only).

af: f64

nlev: i64

NLEV (ngspice-47 only, default 2): noise equation selector — < 3 channel thermal 4kT·(2/3)|gm|, 3 the GDSNOI-scaled form; for the MOSFETs also the flicker form (0/1/2–3).

gdsnoi: f64

GDSNOI (ngspice-47 only, default 1): channel noise coefficient of NLEV = 3.

tnom: Option<f64>

TNOM in kelvin.

Implementations

impl Mos1Model

pub fn new(nmos: bool) -> Self

Trait Implementations

impl Clone for Mos1Model

fn clone(&self) -> Self

Returns a duplicate of the value.

fn clone_from(&mut self, source: &Self)

Performs copy-assignment from source.

impl Debug for Mos1Model

fn fmt(&self, f: &mut Formatter<'_>) -> Result

Formats the value using the given formatter.