Expand description
FMC
Modules§
- bcr
- SRAM/NOR-Flash chip-select control register for bank %s
- bcr1
- SRAM/NOR-Flash chip-select control register for bank 1
- btr
- SRAM/NOR-Flash chip-select timing register for bank %s
- bwtr
- SRAM/NOR-Flash write timing registers %s
- eccr
- This register contain the current error correction code value computed by the ECC computation modules of the FMC NAND controller. When the CPU reads/writes the data from a NAND Flash memory page at the correct address (refer to Section20.8.6: Computation of the error correction code (ECC) in NAND Flash memory), the data read/written from/to the NAND Flash memory are processed automatically by the ECC computation module. When X bytes have been read (according to the ECCPS field in the FMC_PCR registers), the CPU must read the computed ECC value from the FMC_ECC registers. It then verifies if these computed parity data are the same as the parity value recorded in the spare area, to determine whether a page is valid, and, to correct it otherwise. The FMC_ECCR register should be cleared after being read by setting the ECCEN bit to 0. To compute a new data block, the ECCEN bit must be set to 1.
- patt
- The FMC_PATT read/write register contains the timing information for NAND Flash memory bank. It is used for 8-bit accesses to the attribute memory space of the NAND Flash for the last address write access if the timing must differ from that of previous accesses (for Ready/Busy management, refer to Section20.8.5: NAND Flash prewait feature).
- pcr
- NAND Flash control registers
- pcscntr
- PSRAM chip select counter register
- pmem
- Common memory space timing register
- sr
- status and interrupt register
Structs§
- Register
Block - Register block
Type Aliases§
- BCR
- BCR (rw) register accessor: SRAM/NOR-Flash chip-select control register for bank %s
- BCR1
- BCR1 (rw) register accessor: SRAM/NOR-Flash chip-select control register for bank 1
- BTR
- BTR (rw) register accessor: SRAM/NOR-Flash chip-select timing register for bank %s
- BWTR
- BWTR (rw) register accessor: SRAM/NOR-Flash write timing registers %s
- ECCR
- ECCR (r) register accessor: This register contain the current error correction code value computed by the ECC computation modules of the FMC NAND controller. When the CPU reads/writes the data from a NAND Flash memory page at the correct address (refer to Section20.8.6: Computation of the error correction code (ECC) in NAND Flash memory), the data read/written from/to the NAND Flash memory are processed automatically by the ECC computation module. When X bytes have been read (according to the ECCPS field in the FMC_PCR registers), the CPU must read the computed ECC value from the FMC_ECC registers. It then verifies if these computed parity data are the same as the parity value recorded in the spare area, to determine whether a page is valid, and, to correct it otherwise. The FMC_ECCR register should be cleared after being read by setting the ECCEN bit to 0. To compute a new data block, the ECCEN bit must be set to 1.
- PATT
- PATT (rw) register accessor: The FMC_PATT read/write register contains the timing information for NAND Flash memory bank. It is used for 8-bit accesses to the attribute memory space of the NAND Flash for the last address write access if the timing must differ from that of previous accesses (for Ready/Busy management, refer to Section20.8.5: NAND Flash prewait feature).
- PCR
- PCR (rw) register accessor: NAND Flash control registers
- PCSCNTR
- PCSCNTR (rw) register accessor: PSRAM chip select counter register
- PMEM
- PMEM (rw) register accessor: Common memory space timing register
- SR
- SR (rw) register accessor: status and interrupt register