gan-cv-simulator

gan-cv-simulator is a high-performance simulation tool designed to model the Capacitance-Voltage (C-V) characteristics of n-GaN and GaN HEMT diodes. It solves the 1D Poisson equation to determine the potential profile and charge distribution across multi-layer semiconductor structures.

Features

• Multi-layer Support: Model complex heterostructures with any number of semiconductor and insulator layers.
• Physical Accuracy: Accounts for donor activation, effective mass, and band offsets.
• Flexible Fixed Charges: Define bulk fixed charges within layers and interface charges between layers.
• High Performance: Implementation in Rust with support for parallel processing (via Rayon) for faster convergence.
• Interactive Configuration: Easy-to-use CLI for defining simulation parameters.

Installation

Manual Installation

Download the pre-compiled binaries from the GitHub Releases page.

From Source

Ensure you have the Rust toolchain installed, then:

git clone https://github.com/WideBandAI/gan-cv-simulator.git
cd gan-cv-simulator
cargo build --release

The binary will be located at target/release/gan-cv-simulator.

Usage

Run the simulator from the terminal:

gan-cv-simulator

The simulator will prompt you interactively for various parameters, including:

• Simulation settings (convergence criteria, relaxation factors)
• Measurement conditions (temperature, voltage sweep)
• Device structure (layer thickness, materials, doping)
• Fixed charge densities
• Mesh discretization

Documentation

For detailed information, please refer to:

• Parameter Descriptions: Explanation of all configuration parameters.
• Simulation Physics: Mathematical models and physical equations used.

Outputs

Simulation results are saved in the outputs/ directory under a subfolder named after your simulation. Key output files include:

• cv_characteristics.csv: The calculated capacitance vs. voltage data.
• potential_profile.csv: Spatial distribution of the electrostatic potential.
• Plots generated using the plotters library.

Citation

If you use this software in your research, please cite the following paper:

@article{nishiguchi2017current,
  title={Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors},
  author={Nishiguchi, Kenya and Kaneki, Syota and Ozaki, Shiro and Hashizume, Tamotsu},
  journal={Japanese Journal of Applied Physics},
  volume={56},
  number={10},
  pages={101001},
  year={2017},
  publisher={The Japan Society of Applied Physics}
}

License

This project is licensed under the Apache License 2.0 - see the LICENSE file for details.